SID11x1K
Single channel/MOSFET IGBT gate driver, can provide reinforced insulation withstand voltage 650 V
Single channel/MOSFET IGBT gate driver, can provide reinforced insulation withstand voltage 650 V
SID11x1K is to adopt the eSOP encapsulation of single channel MOSFET and IGBT drive.The device USES Power Integrations innovation technology of solid insulation FluxLink reinforced insulation is realized.The 8 A peak output drive current can be directly driven 600 A (typical) of switching devices, without having to use the external drive level.For beyond SID11x1K gate drive requirement of the maximum output current, can add outside a amplifier (push).Stability of the gate of the positive and negative voltage is provided by a single winding isolation voltage source.
The device also has brought advanced soft shut off (ASSD) short circuit protection (DESAT), used for the original party and vice party under-voltage protection (UVLO) and with temperature compensation and process output impedance rail-to-rail output more functions, such as to ensure that the product even in harsh conditions can work safety.
Controller (PWM and fault) signal is compatible with 5 V CMOS logic level, using partial pressure resistance but also can adjust the logic level to 15 V.